MURH840CT
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
400
V
Average Rectified Forward Current
(TC
= 155
°C) Per Leg
Total Device
IF(AV)
4.0
8.0
A
Peak Repetitive Forward Current per Diode Leg
(Square Wave, 20 kHz, TC
= 149
°C)
IFM
8.0
A
Non?Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
100
A
Controlled Avalanche Energy
WAVAL
20
mJ
Operating Junction and Storage Temperature Range
TJ, Tstg
?65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t
he
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Conditions
Symbol
Max
Unit
Maximum Thermal Resistance, Junction?to?Case
Min. Pad
RJC
3.0
°C/W
Maximum Thermal Resistance, Junction?to?Ambient
Min. Pad
RJA
60
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typical
Max
Unit
Maximum Instantaneous Forward Voltage (Note 1)
(iF
= 4.0 A, T
j
= 150
°C)
(iF
= 4.0 A, T
j
= 25
°C)
vF
?
?
1.12
1.45
1.9
2.2
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, Tj
= 150
°C)
(Rated dc Voltage, Tj
= 25
°C)
iR
?
?
300
4.0
500
10
A
Maximum Reverse Recovery Time
(IF
= 1.0 A, di/dt = 50 A/
s)
trr
?
?
28
ns
1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
0.1
0.4 0.8 1.2 1.6 2.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
2.4 2.8 3.2
100
10
1.0
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
175°C
150°C
100°C
25°C
0.1
0.6 1.0 1.4 1.8 2.2
2.6 3.0 5.03.4 3.8 4.2 4.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
100
10
1.0
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
175°C
150°C
100°C
25°C
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